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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3325
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3325 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3325 2SK3325-S 2SK3325-ZJ PACKAGE TO-220AB TO-262 TO-263
FEATURES
* Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) * Gate voltage rating: 30 V * Low on-state resistance RDS(on) = 0.85 MAX. (VGS = 10 V, ID = 5.0 A) * Avalanche capability ratings * TO-220AB, TO-262, TO-263 package (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tch Tstg
500 30 10 40 85 1.5 150 -55 to +150 10 10.7
V V A A W W C C A mJ
(TO-262)
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
(TO-263)
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1 % 2. Starting Tch = 25 C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14264EJ1V0DS00 (1st edition) Date Published May 2000 NS CP(K) Printed in Japan
(c)
1999, 2000
2SK3325
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain Leakage Current Gate to Source Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V, di/dt = 50 A / s VDD = 400 V, VGS = 10 V, ID = 10 A VDD = 150 V, ID = 5.0 A, VGS(on) = 10 V, RG = 10 , RL = 60 TEST CONDITIONS VDS = 500 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A VDS = 10 V, VGS = 0 V, f = 1 MHz 2.5 2.0 4.0 0.68 1200 190 10 21 11 40 9.5 22 6.5 7.5 1.0 0.5 2.6 0.85 MIN. TYP. MAX. 100 100 3.5 UNIT
A
nA V S pF pF pF ns ns ns ns nC nC nC V
s C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D14264EJ1V0DS00
2SK3325
TYPICAL CHARACTERISTICS(TA = 25 C)
Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
dT - Percentage of Rated Power - %
100 Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
PT - Total Power Dissipation - W
80
80
60 40
60
40
20
20
0
20
40
60
80
100 120
140
160
0
20
40
60
80
100 120
140
160
Tc - Case Temperature - C
Figure3. FORWARD BIAS SAFE OPERATING AREA 100
d ite ) im 0 V )L 1 (on S = S RD t VG (a
Tc - Case Temperature - C
Figure4. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed
ID (pulse) P
10
W
=
ID - Drain Current - A
10
10
ID (DC)
0
Po
we
rD
10
1m
m s
s
ID - Drain Current - A
s
VGS = 20 V 10 V 8.0 V 10
s
iss
1
ip
at
io
n
Li
m
ite
d
VGS = 6.0 V
0.1 1
Tc = 25 C Single Pulse 10 100 1000
VDS - Drain to Source Voltage - V
Figure5. DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100 10 Pulsed
0
4
8
12
16
VDS - Drain to Source Voltage - V
ID - Drain Current - A
1 0.1 0.01 TA = -25 C 25 C 75 C 125 C
0.001 0.0001 0 5 10 15 VGS - Gate to Source Voltage - V
Data Sheet D14264EJ1V0DS00
3
2SK3325
Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth (t) - Transient Thermal Resistance - C/W
100 Rth(ch-A) = 83.0 C/W
10 Rth(ch-C) = 1.47 C/W 1
0.1 Tc = 25 C Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000
PW - Pulse Width - s
Figure7. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2.0
IyfsI - Forward Transfer Admittance - S
10
1 TA = -25 C 25 C 75 C 125 C 0.1
RDS(on) - Drain to Source On-state Resistance -
1.0
ID = 10 A 5.0 A 2.0 A
0.01 0.01
VDS = 10 V Pulsed 0.1 1 ID - Drain Current - A 10 100
0.0
Pulsed 0 5 10 15 20 25 VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance -
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
VGS(off) - Gate to Source Cut-off Voltage - V
Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 VDS = 10 V ID = 1 mA 3.0
3.0
Pulsed
2.0
2.0
1.0
1.0
0 0.1
0.0
-50 0 50 100 150 200
1
10
100
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D14264EJ1V0DS00
2SK3325
RDS(on) - Drain to Source On-state Resistance -
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 3.0
Figure12. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
ISD - Diode Forward Current - A
Pulsed
10
2.0 ID = 10 A
1
VGS = 10 V VGS = 0 V
1.0
ID = 5.0 A
0.1
0.0 -50
VGS = 10 V 0 50 100 150 Tch - Channel Temperature - C
0.01 0.0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
Figure14. SWITCHING CHARACTERISTICS 1000
Figure13. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V f = 1.0 MHz
td(on), tr, td(off), tf - Switching Time - ns
10000
Ciss, Coss, Crss - Capacitance - pF
tr tf
Ciss 1000 Coss 100
100 td(on) td(off) 10 VDD = 150 V VGS = 10 V RG = 10 0.1 1 10 ID - Drain Current - A 100
10 Crss 1
1
0.1 1 10 100 1000 VDS - Drain to Source Voltage - V
Figure15. REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 900
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 800
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 50 A/s VGS = 0 V
700 600 500 400 300 200 100 0 5 VDS VDD = 400 V 250 V 100 V
14 12 VGS 10 8 6 4 2 15 20 0 25
800 700 600 500 400 300 200 100 0 0.1 1 10 100 IF - Drain Current - A
10
QG - Gate Charge - nC
Data Sheet D14264EJ1V0DS00
VGS - Gate to Source Voltage - V
ID = 10 A
5
2SK3325
Figure17. SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE 16 ID(peak) = IAS RG = 25 VGS = 20 V 0 V VDD = 150 V EAS = 10.7 mJ 10 8 6 4 2 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - C
Figure18. SINGLE AVALANCHE ENERGY vs INDUCTIVE LOAD 100
IAS - Single Avalanche Energy - A
EAS - Single Avalanche Energy - mJ
14 12
RG = 25 VDD = 150 V VGS = 20 V 0 V Starting Tch = 25 C IAS = 10 A
EAS = 10
10
.7 m
J
1
0.1 10
100
1m
10 m
L - Inductive Load - H
6
Data Sheet D14264EJ1V0DS00
2SK3325
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
3.00.3 10.6 MAX. 10.0 5.9 MIN. 15.5 MAX. 4.8 MAX.
2)TO-262 (MP-25 Fin Cut)
1.00.5
3.60.2
4.8 MAX. 1.30.2
1.30.2
(10) 4
1
2
3
4 123 6.0 MAX.
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3)TO-263 (MP-25ZJ)
(10) 4 1.00.5 8.50.2 4.8 MAX. 1.30.2
EQUIVALENT CIRCUIT
Drain
5.70.4
1.40.2 0.70.2 2.54 TYP. 1 2
(0
) .5R
3 2.54 TYP.
(0
.8R
)
0.50.2
Gate
Body Diode
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Source
Data Sheet D14264EJ1V0DS00
7
2SK3325
* The information in this document is current as of May, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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